Ssd 860 evo m

Samsung 860 EVO Series MZ-N6E250BW Internal Solid State Drive (SSD), M.2 (2280) size Factor, 250GB Capacity, Up to 550 MB/s (Seq. Read), Up lớn 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s và SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).

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Samsung 860 EVO




The SSD khổng lồ trust

The newest edition khổng lồ the world’s best-selling* SATA SSD series, the Samsung 860 EVO. Specially designed for mainstream PCs and laptops, with the latest V-NAND and a robust algorithm-based controller, this fast and reliable SSD comes in a wide range of compatible form factors và capacities.

* Sources: NPD (US data from Jan. Năm ngoái to Oct. 2017) và GfK (EU5 data from Jan. Năm ngoái to Sep. 2017, china data from Jan. Năm 2016 to Sep. 2017)





Enhanced performance

Speeds are more consistent, even with heavy workloads & multi-tasks. The 860 EVO performs at sequential writes up khổng lồ 520 MB/s* with Intelligent TurboWrite technology, and sequential reads up to 550 MB/s. The TurboWrite buffer size* is upgraded from 12 GB to lớn 78 GB for faster file transfer.

* Performance may vary based on SSD’s firmware version & system hardware & configuration. Sequential write performance measurements are based on Intelligent TurboWrite technology. Sequential performance measurements based on CrystalDiskMark v.5.0.2 & IOmeter 1.1.0. The sequential write performances after Intelligent TurboWrite region are 300 MB/s for 250/500 GB & 500 MB/s for 1 TB.

* demo system configuration: Intel chip core i5-3550 CPU
3.3 GHz, DDR3 1333 MHz 4 GB, OS – Windows 7 Ultimate x64, Chipset: asus P8H77-V

* The TurboWrite buffer form size varies based on the capacity of the SSD; 12 GB for 250 GB model, 22 GB for 500 GB model, 42 GB for 1 TB mã sản phẩm and 78 GB for 2/4 TB. For more information on the TurboWrite, please visit 





Boosted endurance

Safely store and render large sized 4K videos và 3D data used by the latest applications, up to lớn 8x higher TBW (Terabytes Written)* than the previous 850 EVO. The latest V-NAND technology gives you up khổng lồ 2,400 TBW, or is backed by a 5-year limited warranty.*

* Warrantied TBW for 860 EVO: 150 TBW for 250 GB model, 300 TBW for 500 GB model, 600 TBW for 1 TB model, 1,200 TBW for 2 TB mã sản phẩm and 2,400 TBW for 4 TB model.

* 5-years or TBW, whichever comes first. For more information on the warranty, please find the enclosed warranty statement in the package




Smart compatibility

Benefit from faster, more fluid communication with your host system. The refined ECC* algorithm and a new MJX controller generate higher speeds, & the improved queued trim enhances Linux compatibility. Our advanced engineering makes the 860 EVO more compatible with your computing system.





Multi form factors

Whatever kích thước your computer needs, there is an 860 EVO for you. Choose among the 2.5-inch size for desktop PCs & laptops, và the SATA-based M.2 (2280) or the mSATA for ultra-slim computing devices.





Samsung Magician


Management software

Samsung Magician software is designed to lớn help you manage your SSD with a simple và intuitive user interface.

Firmware update

Get notifications when new firmware is released, và easily install updates for enhanced performance, stability, và compatibility.

Performance benchmark

Check your SSD"s sequential and random read/write speeds, so you can maintain superb performance.

Data security

Protect data by selecting security options. The 860 EVO supports AES 256-bit hardware-based encryption and is compliant with TCG Opal and IEEE 1667.

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BrandSeriesModelHighlightsApplicationCapacityForm FactorInterfaceDimensionWeightStorage MemoryControllerCache MemorySoftwareInstallation KitWarrantyTRIM SupportS.M.A.R.T SupportGC (Garbage Collection)Encryption SupportWWN SupportDevice Sleep Mode SupportSequential ReadSequential WriteRandom Read (4KB, QD32)Random Write (4KB, QD32)Random Read (4KB, QD1)Random Write (4KB, QD1)Average power nguồn Consumption (system level)Power consumption (Idle)TRIM SupportOperating TemperatureShock
860 EVO
Samsung 860 EVO Series MZ-N6E250BW Internal Solid State Drive (SSD), M.2 (2280) khung Factor, 250GB Capacity, Up to 550 MB/s (Seq. Read), Up to 520 MB/s (Seq. Write), SATA 6Gb/s (compatible with SATA 3Gb/s & SATA 1.5Gb/s), Samsung MJX Controller, Samsung V-NAND 3bit MLC Storage Memory, Samsung 512 MB Low power DDR4 SDRAM SDRAM Cache Memory, 1.5 Million Hours Reliability (MTBF).
Client PCs
250 GB (1 GB=1 Billionbyte by IDEMA)
M.2 2280
Max 80.15 x 22.15 x 2.38 (mm) (W x H x D)
Max 8.0g
Samsung V-NAND 3bit MLC
Samsung MJX Controller
512 MB Low power DDR4 SDRAM
Magician Software for SSD management
Not Available
5 Year Limited Warranty or 150 TBW Limited Warranty
Special Feature
TRIM Supported
S.M.A.R.T Supported
Auto Garbage Collection Algorithm
AES 256-bit Encryption (Class 0) TCG/Opal IEEE1667 (Encrypted drive)
Up lớn 550 MB/sec
Up to lớn 520 MB/sec
Up lớn 97,000 IOPS
Up khổng lồ 88,000 IOPS
Up lớn 10,000 IOPS
Up khổng lồ 42,000 IOPS
Average: 2.2 WattsMaximum: 4.0 Watts (Burst mode)
Max. 50mW
1.5 Million Hours Reliability (MTBF)
0 °C to lớn 70 °C (Measured by SMART Temperature. Proper airflow recommended)
1500G , duration 0.5m sec, 3 axis

What is V-NAND technology?Shedding light on a whole new standard of capacity and performance.

Samsung V-NAND công nghệ overcomes the capacity limitations of traditional 2d NAND giải pháp công nghệ with its revolutionary vertical design. V-NAND also applies innovative Charge Trap Flash (CTF) technology which prevents data corruption caused by cell-to-cell interference. The synergy of both structural và material innovations leads lớn improved speed, power nguồn efficiency, and endurance.


Vertical expansion breaks through horizontal limit

Samsung revolutionized the storage industry by shifting the planar NAND khổng lồ a vertical structure. Samsung V-NAND giải pháp công nghệ features a quality design that stacks 48 layers on top of one another instead of trying lớn decrease the cells’ pitch size. Samsung used Channel Hole công nghệ (CHT) lớn enable cells lớn connect vertically with one another through a cylindrical channel that runs through stacked cells.




Material innovation that no one can match

Samsung has shifted the paradigm of material used for NAND. Samsung applies the innovative CTF giải pháp công nghệ which uses a non-conductive layer of Silicon Nitride (SiN), temporarily trapping electrical charges khổng lồ maintain cell integrity.

This non-conductive layer wraps around the control gate of the cell, acting as an insulator that holds charges to lớn prevent data corruption caused by cell-to-cell interference.




Vertical architecture paves the way for amplified capacity

Layering cells vertically in three-dimensional stacks provides much greater cell density. Samsung V-NAND công nghệ lets heavy-workload users và data centers store và handle more data with greatly improved capacity.

Samsung V-NAND enables up lớn 100 layers of cells to be stacked with the potential lớn scale the mật độ trùng lặp từ khóa up to lớn 1 Terabit. The 2 chiều planar NAND mật độ trùng lặp từ khóa ceiling can only reach the minimum density of V-NAND.




Innovative algorithms equal faster performance

Traditional planar NAND memory requires the creation of sets of complex program algorithms lớn prevent data corruption caused by cell-to-cell interference. However, Samsung V-NAND is virtually immune khổng lồ cell-to-cell interference.

V-NAND does not need lớn go through a complex program algorithm lớn write data, and this enables the memory khổng lồ write data up to two times faster than traditional 2 chiều planar NAND flash memory.




Unprecedented power efficiency

Since V-NAND công nghệ has eliminated the issue of cell-to-cell interference, its programming steps are greatly reduced. As a result, power nguồn consumption is substantially lowered by up khổng lồ 45 percent compared to lớn planar NAND memory.




Embedded high endurance to lớn store your valuable data

Samsung V-NAND provides up to twice the endurance of planar NAND. V-NAND decreases its electric field because its cells are slightly larger, và employs CTF-based insulators eliminating the risk of cell-to-cell interference, resulting in superior retention performance.

In comparison between 3-bit and 2-bit, Samsung 3-bit V-NAND shows endurance similar khổng lồ that of 2-bit planar NAND, and even better performance in heavy workloads. V-NAND also shows a sustained P/E cycle for longer periods of time.